Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017)
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21)
doi: 10.1088/1361-6528/aa6cd9
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico–chemical properties of oxygen-deficient amorphous HfO2−x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2−x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2−x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. |
| Art des Eintrags: | Bibliographie |
| Titel: | Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties |
| Sprache: | Englisch |
| Publikationsjahr: | 26 Mai 2017 |
| Verlag: | IOP Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nanotechnology |
| Jahrgang/Volume einer Zeitschrift: | 28 |
| (Heft-)Nummer: | 21 |
| DOI: | 10.1088/1361-6528/aa6cd9 |
| Kurzbeschreibung (Abstract): | Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico–chemical properties of oxygen-deficient amorphous HfO2−x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2−x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2−x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 19 Mai 2017 10:51 |
| Letzte Änderung: | 13 Nov 2018 14:37 |
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