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Anzahl der Einträge: 6.

Artikel

Häming, Marc ; Issanin, Alexander ; Walker, Daniel ; Seggern, Heinz von ; Jaegermann, Wolfram ; Bonrad, Klaus (2014)
Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films.
In: The Journal of Physical Chemistry C, 118 (24)
doi: 10.1021/jp501956z
Artikel, Bibliographie

Babu, Deepu J. ; Lange, Marcus ; Cherkashinin, Gennady ; Issanin, Alexander ; Staudt, Reiner ; Schneider, Jörg J. (2013)
Gas adsorption studies of CO2 and N2 in spatially aligned double-walled carbon nanotube arrays.
In: Carbon, 61
doi: 10.1016/j.carbon.2013.05.045
Artikel, Bibliographie

Schneider, Jörg J. ; Hoffmann, Rudolf C. ; Issanin, Alexander ; Dilfer, Stefan (2011)
Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics.
In: Materials Science and Engineering B , 176 (13)
doi: 10.1016/j.mseb.2011.05.024
Artikel, Bibliographie

Pashchanka, Mikhail ; Hoffmann, Rudolf C. ; Gurlo, Aleksander ; Swarbrick, Janine C. ; Khanderi, Jayaprakash ; Engstler, Jörg ; Issanin, Alexander ; Schneider, Jörg J. (2011)
A molecular approach to Cu doped ZnO nanorods with tunable dopant content.
In: Dalton Transactions, 40 (16)
doi: 10.1039/c0dt01567a
Artikel, Bibliographie

Hoffmann, Rudolf C. ; Dilfer, Stefan ; Issanin, Alexander ; Schneider, Jörg J. (2010)
Solution processed ZnO – Challenges in processing and performance on flexible substrates.
In: Physica Status Solidi A, 207 (7)
Artikel, Bibliographie

Schneider, Jörg J. ; Hoffmann, Rudolf C. ; Engstler, Jörg ; Soffke, Oliver ; Jaegermann, Wolfram ; Issanin, Alexander ; Klyszcz, Andreas (2008)
A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material.
In: Advanced Materials, 20 (18)
doi: 10.1002/adma.200800819
Artikel, Bibliographie

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