Häming, Marc ; Issanin, Alexander ; Walker, Daniel ; Seggern, Heinz von ; Jaegermann, Wolfram ; Bonrad, Klaus (2014):
Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films.
In: The Journal of Physical Chemistry C, 118 (24), pp. 12826-12836. ACS Publications, ISSN 1932-7447,
[Article]

Babu, Deepu J. ; Lange, Marcus ; Cherkashinin, Gennady ; Issanin, Alexander ; Staudt, Reiner ; Schneider, Jörg J. (2013):
Gas adsorption studies of CO2 and N2 in spatially aligned double-walled carbon nanotube arrays.
In: Carbon, 61, pp. 616-623. ISSN 00086223,
[Article]

Schneider, Jörg J. ; Hoffmann, Rudolf C. ; Issanin, Alexander ; Dilfer, Stefan (2011):
Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics.
In: Materials Science and Engineering B , 176 (13), pp. 965-971. [Article]

Pashchanka, Mikhail ; Hoffmann, Rudolf C. ; Gurlo, Aleksander ; Swarbrick, Janine C. ; Khanderi, Jayaprakash ; Engstler, Jörg ; Issanin, Alexander ; Schneider, Jörg J. (2011):
A molecular approach to Cu doped ZnO nanorods with tunable dopant content.
In: Dalton Transactions, 40 (16), pp. 4307-4314. RSC, ISSN 1477-9226,
[Article]

Hoffmann, Rudolf C. ; Dilfer, Stefan ; Issanin, Alexander ; Schneider, Jörg J. (2010):
Solution processed ZnO – Challenges in processing and performance on flexible substrates.
In: Physica Status Solidi A, 207 (7), pp. 1-6. [Article]

Schneider, Jörg J. ; Hoffmann, Rudolf C. ; Engstler, Jörg ; Soffke, Oliver ; Jaegermann, Wolfram ; Issanin, Alexander ; Klyszcz, Andreas (2008):
A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material.
In: Advanced Materials, 20 (18), pp. 3383-3387. ISSN 09359648,
[Article]