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Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films

Häming, Marc and Issanin, Alexander and Walker, Daniel and von Seggern, Heinz and Jaegermann, Wolfram and Bonrad, Klaus (2014):
Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films.
In: The Journal of Physical Chemistry C, ACS Publications, pp. 12826-12836, 118, (24), ISSN 1932-7447, [Online-Edition: http://dx.doi.org/10.1021/jp501956z],
[Article]

Abstract

Solution-processed metal oxide semiconductors are of high interest for the preparation of high-mobility transparent metal oxide (TMO) semiconductor thin films and thin film transistors (TFTs). It has been shown that the charge transport properties of indium-zinc oxide (IZO) thin films from molecular precursor solutions depend strongly on the preparation conditions, in particular on the precursor conversion temperature T-pc and, to some surprise, also on the concentration of the precursor solution. Therefore, the chemical and the electronic structure of solution-processed IZO thin films have been studied in detail with Xray photoelectron spectroscopy (XPS) under systematic variation of Tpc and the concentration of the precursor solution. A distinct spectral feature is observed in the valence band spectra close to the Fermi level at E-B = 0.45 eV binding energy which correlates with the trends in the sheet resistivity, the field effect mobility mu(FE), and the optical gap E-g(opt) from four-point-probe (4PP), TFT, and UV-vis measurements, respectively. A comprehensive model of the interrelation between the conditions during solution-processing, the chemical and electronic structure, and the charge transport properties is developed.

Item Type: Article
Erschienen: 2014
Creators: Häming, Marc and Issanin, Alexander and Walker, Daniel and von Seggern, Heinz and Jaegermann, Wolfram and Bonrad, Klaus
Title: Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films
Language: English
Abstract:

Solution-processed metal oxide semiconductors are of high interest for the preparation of high-mobility transparent metal oxide (TMO) semiconductor thin films and thin film transistors (TFTs). It has been shown that the charge transport properties of indium-zinc oxide (IZO) thin films from molecular precursor solutions depend strongly on the preparation conditions, in particular on the precursor conversion temperature T-pc and, to some surprise, also on the concentration of the precursor solution. Therefore, the chemical and the electronic structure of solution-processed IZO thin films have been studied in detail with Xray photoelectron spectroscopy (XPS) under systematic variation of Tpc and the concentration of the precursor solution. A distinct spectral feature is observed in the valence band spectra close to the Fermi level at E-B = 0.45 eV binding energy which correlates with the trends in the sheet resistivity, the field effect mobility mu(FE), and the optical gap E-g(opt) from four-point-probe (4PP), TFT, and UV-vis measurements, respectively. A comprehensive model of the interrelation between the conditions during solution-processing, the chemical and electronic structure, and the charge transport properties is developed.

Journal or Publication Title: The Journal of Physical Chemistry C
Volume: 118
Number: 24
Publisher: ACS Publications
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 27 Feb 2015 13:36
Official URL: http://dx.doi.org/10.1021/jp501956z
Identification Number: doi:10.1021/jp501956z
Funders: We thank TU Darmstadt and Merck KGaA for financial support.
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