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A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material

Schneider, Jörg J. and Hoffmann, Rudolf C. and Engstler, Jörg and Soffke, Oliver and Jaegermann, Wolfram and Issanin, Alexander and Klyszcz, Andreas (2008):
A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material.
In: Advanced Materials, pp. 3383-3387, 20, (18), ISSN 09359648, [Online-Edition: http://dx.doi.org/10.1002/adma.200800819],
[Article]

Item Type: Article
Erschienen: 2008
Creators: Schneider, Jörg J. and Hoffmann, Rudolf C. and Engstler, Jörg and Soffke, Oliver and Jaegermann, Wolfram and Issanin, Alexander and Klyszcz, Andreas
Title: A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material
Language: English
Journal or Publication Title: Advanced Materials
Volume: 20
Number: 18
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 24 Mar 2015 14:03
Official URL: http://dx.doi.org/10.1002/adma.200800819
Identification Number: doi:10.1002/adma.200800819
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