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Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Rodenbücher, C. ; Hildebrandt, E. ; Szot, K. ; Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Breuer, U. ; Waser, R. ; Alff, L. (2016)
Hafnium carbide formation in oxygen deficient hafnium oxide thin films.
In: Applied Physics Letters, 108 (25)
doi: 10.1063/1.4954714
Article, Bibliographie

Abstract

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2−x) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

Item Type: Article
Erschienen: 2016
Creators: Rodenbücher, C. ; Hildebrandt, E. ; Szot, K. ; Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Breuer, U. ; Waser, R. ; Alff, L.
Type of entry: Bibliographie
Title: Hafnium carbide formation in oxygen deficient hafnium oxide thin films
Language: English
Date: 2016
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 108
Issue Number: 25
DOI: 10.1063/1.4954714
Abstract:

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2−x) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

Uncontrolled Keywords: Carbon, Hafnium, Carbides, X-ray photoelectron spectroscopy, Thin film devices
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 18 May 2017 08:04
Last Modified: 18 May 2017 08:04
PPN:
Funders: This work was supported in part by the Deutsche Forschungsgemeinschaft under Project Nos. SFB 917 and AL560/13-2., Funding by the Federal Ministry of Education and Research (BMBF) under Contract No. 16ES0250 is also gratefully acknowledged., We thank funding by ENIAC JU within the project PANACHE.
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