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Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces

Kraft, D. ; Thissen, A. ; Broetz, J. ; Flege, S. ; Campo, M. ; Klein, Andreas ; Jaegermann, W. (2003)
Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces.
In: Journal of Applied Physics, 94 (5)
doi: 10.1063/1.1597757
Artikel, Bibliographie

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Kurzbeschreibung (Abstract)

We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface.

Typ des Eintrags: Artikel
Erschienen: 2003
Autor(en): Kraft, D. ; Thissen, A. ; Broetz, J. ; Flege, S. ; Campo, M. ; Klein, Andreas ; Jaegermann, W.
Art des Eintrags: Bibliographie
Titel: Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces
Sprache: Englisch
Publikationsjahr: 2003
Verlag: AIP
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Applied Physics
Jahrgang/Volume einer Zeitschrift: 94
(Heft-)Nummer: 5
DOI: 10.1063/1.1597757
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Kurzbeschreibung (Abstract):

We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface.

Freie Schlagworte: II-VI semiconductors, cadmium compounds, etching, photoelectron spectra, atomic force microscopy, scanning electron microscopy, X-ray diffraction, secondary ion mass spectra, valence bands, surface morphology
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung
Hinterlegungsdatum: 06 Sep 2012 08:17
Letzte Änderung: 03 Jul 2024 02:20
PPN:
Sponsoren: This work was supported by the Bundesministerium für Wirtschaft (BmWi), Grant No. 0329857., The authors would like to thank ANTEC Technology GmbH for the intensive discussions, insights into the production process of CdTe solar cells, and delivery of CdTe samples., They also would like to thank Patrick Hoffmann, Ricardo Mikalo, David Batchelor, and Dieter Schmeisser from the BTU Cottbus for their support during our beamtime at the undulator/monochromator U49/2 PGM2 at BESSY II in Berlin.
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