Kraft, D. ; Thissen, A. ; Broetz, Joachim ; Flege, S. ; Campo, M. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces.
In: Journal of Applied Physics, 94 (5)
doi: 10.26083/tuprints-00019908
Artikel, Zweitveröffentlichung, Verlagsversion
Kurzbeschreibung (Abstract)
We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Kraft, D. ; Thissen, A. ; Broetz, Joachim ; Flege, S. ; Campo, M. ; Klein, Andreas ; Jaegermann, Wolfram |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces |
| Sprache: | Englisch |
| Publikationsjahr: | 2021 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 94 |
| (Heft-)Nummer: | 5 |
| DOI: | 10.26083/tuprints-00019908 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/19908 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-199084 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung |
| Hinterlegungsdatum: | 15 Nov 2021 13:13 |
| Letzte Änderung: | 16 Nov 2021 07:18 |
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