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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert (2024)
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 2019, 5 (10)
doi: 10.26083/tuprints-00017041
Article, Secondary publication, Publisher's Version

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Abstract

A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (111) is grown onto a c‐cut Al₂O₃‐substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in‐plane rotated m‐HfO₂ grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming‐free resistive random access memory devices. Combining X‐ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High‐resolution STEM reveals low‐energy grain boundaries with facing (112) and (121) surfaces. The uniform distribution of forming voltages below 2 V — within the operation regime — and the stable switching voltages indicates reduced intra‐ and device‐to‐device variation in grain boundary engineered hafnium‐oxide‐based random access memory devices.

Item Type: Article
Erschienen: 2024
Creators: Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert
Type of entry: Secondary publication
Title: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Language: English
Date: 5 January 2024
Place of Publication: Darmstadt
Year of primary publication: 2019
Place of primary publication: Weinheim
Publisher: Wiley-VCH
Journal or Publication Title: Advanced Electronic Materials
Volume of the journal: 5
Issue Number: 10
Collation: 9 Seiten
DOI: 10.26083/tuprints-00017041
URL / URN: https://tuprints.ulb.tu-darmstadt.de/17041
Corresponding Links:
Origin: Secondary publication DeepGreen
Abstract:

A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (111) is grown onto a c‐cut Al₂O₃‐substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in‐plane rotated m‐HfO₂ grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming‐free resistive random access memory devices. Combining X‐ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High‐resolution STEM reveals low‐energy grain boundaries with facing (112) and (121) surfaces. The uniform distribution of forming voltages below 2 V — within the operation regime — and the stable switching voltages indicates reduced intra‐ and device‐to‐device variation in grain boundary engineered hafnium‐oxide‐based random access memory devices.

Uncontrolled Keywords: grain boundary engineering, hafnium oxide, resistive switching memory, texture transfer, transmission electron microscopy
Identification Number: 1900484
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-170410
Classification DDC: 600 Technology, medicine, applied sciences > 660 Chemical engineering
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 05 Jan 2024 14:17
Last Modified: 08 Jan 2024 08:06
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