TU Darmstadt / ULB / TUbiblio

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert (2019)
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 5 (10)
doi: 10.1017/S1431927619009942
Article, Bibliographie

This is the latest version of this item.

Item Type: Article
Erschienen: 2019
Creators: Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert
Type of entry: Bibliographie
Title: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Language: English
Date: 5 August 2019
Publisher: Wiley-VCH
Journal or Publication Title: Advanced Electronic Materials
Volume of the journal: 5
Issue Number: 10
DOI: 10.1017/S1431927619009942
Corresponding Links:
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 14 Aug 2019 12:54
Last Modified: 08 Jan 2024 08:07
PPN:
Corresponding Links:
Export:
Suche nach Titel in: TUfind oder in Google

Available Versions of this Item

Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details