Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert (2024)
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 2019, 5 (10)
doi: 10.26083/tuprints-00017041
Artikel, Zweitveröffentlichung, Verlagsversion
 | Es ist eine neuere Version dieses Eintrags verfügbar. |
Kurzbeschreibung (Abstract)
A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (111) is grown onto a c‐cut Al₂O₃‐substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in‐plane rotated m‐HfO₂ grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming‐free resistive random access memory devices. Combining X‐ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High‐resolution STEM reveals low‐energy grain boundaries with facing (112) and (121) surfaces. The uniform distribution of forming voltages below 2 V — within the operation regime — and the stable switching voltages indicates reduced intra‐ and device‐to‐device variation in grain boundary engineered hafnium‐oxide‐based random access memory devices.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices |
| Sprache: | Englisch |
| Publikationsjahr: | 5 Januar 2024 |
| Ort: | Darmstadt |
| Publikationsdatum der Erstveröffentlichung: | 2019 |
| Ort der Erstveröffentlichung: | Weinheim |
| Verlag: | Wiley-VCH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advanced Electronic Materials |
| Jahrgang/Volume einer Zeitschrift: | 5 |
| (Heft-)Nummer: | 10 |
| Kollation: | 9 Seiten |
| DOI: | 10.26083/tuprints-00017041 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/17041 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichung DeepGreen |
| Kurzbeschreibung (Abstract): | A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (111) is grown onto a c‐cut Al₂O₃‐substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in‐plane rotated m‐HfO₂ grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming‐free resistive random access memory devices. Combining X‐ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High‐resolution STEM reveals low‐energy grain boundaries with facing (112) and (121) surfaces. The uniform distribution of forming voltages below 2 V — within the operation regime — and the stable switching voltages indicates reduced intra‐ and device‐to‐device variation in grain boundary engineered hafnium‐oxide‐based random access memory devices. |
| Freie Schlagworte: | grain boundary engineering, hafnium oxide, resistive switching memory, texture transfer, transmission electron microscopy |
| ID-Nummer: | 1900484 |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-170410 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 600 Technik, Medizin, angewandte Wissenschaften > 660 Technische Chemie |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 05 Jan 2024 14:17 |
| Letzte Änderung: | 08 Jan 2024 08:06 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
- Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. (deposited 05 Jan 2024 14:17) [Gegenwärtig angezeigt]
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