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Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Miranda-Pantoja, J. M. and Lin, C.-I. and Brandt, M. and Rodriguez-Girones, M. and Hartnagel, H. L. and Sebastian, J. L. (2000):
Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces.
In: IEEE Electron device letters, 21, [Article]

Item Type: Article
Erschienen: 2000
Creators: Miranda-Pantoja, J. M. and Lin, C.-I. and Brandt, M. and Rodriguez-Girones, M. and Hartnagel, H. L. and Sebastian, J. L.
Title: Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces
Language: English
Journal or Publication Title: IEEE Electron device letters
Volume: 21
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:25
License: [undefiniert]
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