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A physics based, analytical model for the threshold voltage in MOSFET's using a unified approach to account for short- and narrow-channel effects

Klös, Alexander (1996):
A physics based, analytical model for the threshold voltage in MOSFET's using a unified approach to account for short- and narrow-channel effects.
In: International Electron Devices Meeting <1996, Hsinchu, Taiwan>: Proceedings. S. 285-288, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 1996
Creators: Klös, Alexander
Title: A physics based, analytical model for the threshold voltage in MOSFET's using a unified approach to account for short- and narrow-channel effects
Language: English
Series Name: International Electron Devices Meeting <1996, Hsinchu, Taiwan>: Proceedings. S. 285-288
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 16:00
License: [undefiniert]
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