Kraft, D. ; Thissen, A. ; Broetz, J. ; Flege, S. ; Campo, M. ; Klein, Andreas ; Jaegermann, W. (2003)
Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces.
In: Journal of Applied Physics, 94 (5)
doi: 10.1063/1.1597757
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2003 |
| Autor(en): | Kraft, D. ; Thissen, A. ; Broetz, J. ; Flege, S. ; Campo, M. ; Klein, Andreas ; Jaegermann, W. |
| Art des Eintrags: | Bibliographie |
| Titel: | Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces |
| Sprache: | Englisch |
| Publikationsjahr: | 2003 |
| Verlag: | AIP |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 94 |
| (Heft-)Nummer: | 5 |
| DOI: | 10.1063/1.1597757 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface. |
| Freie Schlagworte: | II-VI semiconductors, cadmium compounds, etching, photoelectron spectra, atomic force microscopy, scanning electron microscopy, X-ray diffraction, secondary ion mass spectra, valence bands, surface morphology |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung |
| Hinterlegungsdatum: | 06 Sep 2012 08:17 |
| Letzte Änderung: | 03 Jul 2024 02:20 |
| PPN: | |
| Sponsoren: | This work was supported by the Bundesministerium für Wirtschaft (BmWi), Grant No. 0329857., The authors would like to thank ANTEC Technology GmbH for the intensive discussions, insights into the production process of CdTe solar cells, and delivery of CdTe samples., They also would like to thank Patrick Hoffmann, Ricardo Mikalo, David Batchelor, and Dieter Schmeisser from the BTU Cottbus for their support during our beamtime at the undulator/monochromator U49/2 PGM2 at BESSY II in Berlin. |
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Verfügbare Versionen dieses Eintrags
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Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces. (deposited 15 Nov 2021 13:13)
- Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces. (deposited 06 Sep 2012 08:17) [Gegenwärtig angezeigt]
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