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Number of items: 12.

Saura, A. and Monecke, J. and Irmer, G. and Tiginyanu, I. M. and Gärtner, G. and Hartnagel, H. L. (2001):
Fröhlich modes in porous III-V semiconductors.
In: Journal of physics, pp. 6687-6706, [Article]

Tiginyanu, I. and Kravetsky, I. V. and Marowsky, G. and Monecke, J. and Hartnagel, H. L. (2000):
Design of new nonlinear optical materials based on porous III-V compounds.
In: Physica statis solidi, pp. S. 557-560, b 221, [Article]

Schwab, C. and Tiginyanu, I. M. and Sarua, A. and Irmer, G. and Monecke, J. and Sigmund, J. and Hartnagel, H. L. (2000):
Nanoporous membranes and heterostructures based on III-V compounds.
Dordrecht (u.a.), Kluwer Acad. Publ., In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000, [Conference or Workshop Item]

Tiginyanu, I. and Langa, S. and Hjort, K. and Monecke, J. and Hartnagel, H. L. (2000):
Nanotexturization of III-V compounds for THz-wave generation.
Berlin (u.a.), VDE-Verl., In: THz Conference 2000: 8th International Conference on Terahertz Electronics, 2000 Darmstadt Techn. Univ., Inst. für Hochfrequenztechnik. - Berlin (u.a.): VDE-Verl., 2000. Abstract Booklet, S. 275, [Conference or Workshop Item]

Tiginyanu, I. and Schwab, C. and Sarua, A. and Irmer, G. and Monecke, J. and Sigmund, J. and Hartnagel, H. L. (2000):
Optical characteristics of nanostructured III-V compounds.
Dordrecht (u.a.), Kluwer Acad. Publ., In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000, [Conference or Workshop Item]

Monecke, J. and Irmer, G. and Sarua, A. and Tiginyanu, I. M. and Gartner, G. and Hartnagel, H. L. (2000):
Optische Phononen und elektrische Eigenschaften poröser GaP-Membranen.
In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft <2000, Regensburg> = Verhandlungen der Deutschen Physikalischen Gesellschaft; 35,4, [Conference or Workshop Item]

Sarua, A. and Gärtner, G. and Irmer, G. and Monecke, J. and Tiginyanu, I. M. and Hartnagel, H. L. (2000):
Raman and IR-reflectance spectra of porous III-V semiconductor structures.
In: Physica status solidi, pp. S. 207-211, A 182, [Article]

Sarua, A. and Irmer, G. and Monecke, J. and Tiginyanu, I. M. and Schwab, C. and Grob, J.-J. and Hartnagel, H. L. (2000):
Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing.
In: Journal of applied physics, pp. S. 7006-7012, 88, [Article]

Tiginyanu, I. and Kravetsky, I. V. and Monecke, J. and Cordts, W. and Marowsky, G. and Hartnagel, H. L. (2000):
Semiconductor sieves as nonlinear optical materials.
In: Applied physics letters, pp. S. 2415-2417, 77, [Article]

Tiginyanu, I. and Kravetsky, I. V. and Marowsky, G. and Monecke, J. and Cordts, W. and Hartnagel, H. L. (2000):
Semiconductor sieves as novel materials for nonlinear optical applications.
In: Materials Research Society: Fall Meeting <2000, Boston, Mass.>. Abstract Booklet; Report ES.13, [Conference or Workshop Item]

Tiginyanu, I. and Irmer, G. and Monecke, J. and Hartnagel, H. L. (1997):
MicroRaman scattering study of surface-related phonon modes in porous GaP.
In: Physical review. B 55 (1997), S. 6739-6742, [Article]

Tiginyanu, I. and Irmer, G. and Monecke, J. and Vogt, Alexander and Hartnagel, H. L. (1997):
Porosity-induced modification of the phonon spectrum of n-GaAs.
In: Semiconductor science technology. 12 (1997), S. 491-493, [Article]

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