Englisch

Aurino, P. P. ; Kalabukhov, A. ; Tuzla, N. ; Olsson, E. ; Klein, Andreas ; Erhart, P. ; Boikov, Y. A. ; Serenkov, I. T. ; Sakharov, V. I. ; Claeson, T. ; Winkler, D. (2015)
Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces.
In: Physical Review B, 92 (15)
doi: 10.1103/PhysRevB.92.155130
Artikel, Bibliographie

Ruestes, C. J. ; Stukowski, A. ; Tang, Y. ; Tramontina, D. R. ; Erhart, P. ; Remington, B. A. ; Urbassek, H. M. ; Meyers, M. A. ; Bringa, E. M. (2014)
Atomistic simulation of tantalum nanoindentation: Effects of indenter diameter, penetration velocity, and interatomic potentials on defect mechanisms and evolution.
In: Materials Science and Engineering: A, 613
doi: 10.1016/j.msea.2014.07.001
Artikel, Bibliographie

Albe, Karsten ; Erhart, P. ; Müller, M. (2007)
Analytic Interatomic Potentials for Atomic-Scale Simulations of Metals and Metal Compounds: A Brief Overview.
In: ntegral Materials Modeling: Towards Physics-Based Through-Process Models, (16)
doi: 10.1002/9783527610983.ch16
Artikel, Bibliographie

Juslin, N. ; Erhart, P. ; Traskelin, P. ; Nord, J. ; Henriksson, K. O. E. ; Nordlund, K. ; Salonen, E. ; Albe, K. (2005)
Analytical interatomic potential for modeling nonequilibrium processes in the W-C-H system.
In: J. Appl. Phys., 98 (12)
doi: 10.1063/1.2149492
Artikel, Bibliographie

Erhart, P. ; Albe, K. (2005)
Molecular dynamics simulations of gas phase condensation of silicon carbide nanoparticles.
In: Adv. Eng. Mat., 7 (10)
doi: 10.1002/adem.200500119
Artikel, Bibliographie

Erhart, P. ; Bringa, E. M. ; Kumar, M. ; Albe, K. (2005)
Atomistic mechanism of shock-induced void collapse in nanoporous metals.
In: Phys. Rev. B, 72 (5)
doi: 10.1103/PhysRevB.72.052104
Artikel, Bibliographie

Erhart, P. ; Albe, K. (2005)
Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide.
In: Phys. Rev. B, 71 (3)
doi: 10.1103/PhysRevB.71.035211
Artikel, Bibliographie

Erhart, P. ; Albe, K. (2004)
The role of thermostats in modeling vapor phase condensation of silicon nanoparticles.
In: Appl. Surf. Sci., 226 (1-3)
doi: 10.1016/j.apsusc.2003.11.003
Artikel, Bibliographie

Nord, J. ; Albe, K. ; Erhart, P. ; Nordlund, K. (2003)
Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride.
In: J. Phys.: Condens. Matter., 15 (32)
doi: 10.1088/0953-8984/15/32/324
Artikel, Bibliographie