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Number of items: 9.

Aurino, P. P. and Kalabukhov, A. and Tuzla, N. and Olsson, E. and Klein, Andreas and Erhart, P. and Boikov, Y. A. and Serenkov, I. T. and Sakharov, V. I. and Claeson, T. and Winkler, D. (2015):
Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces.
In: Physical Review B, p. 155130, 92, (15), ISSN 1098-0121,
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.92.155130],
[Article]

Ruestes, C. J. and Stukowski, A. and Tang, Y. and Tramontina, D. R. and Erhart, P. and Remington, B. A. and Urbassek, H. M. and Meyers, M. A. and Bringa, E. M. (2014):
Atomistic simulation of tantalum nanoindentation: Effects of indenter diameter, penetration velocity, and interatomic potentials on defect mechanisms and evolution.
In: Materials Science and Engineering: A, Elsevier Science Publishing, pp. 390-403, 613, ISSN 09215093,
[Online-Edition: http://dx.doi.org/10.1016/j.msea.2014.07.001],
[Article]

Albe, Karsten and Erhart, P. and Müller, M. (2007):
Analytic Interatomic Potentials for Atomic-Scale Simulations of Metals and Metal Compounds: A Brief Overview.
In: ntegral Materials Modeling: Towards Physics-Based Through-Process Models, Wiley-VCH Verlag GmbH & Co. KGaA, pp. 197-206, (16), [Online-Edition: http://dx.doi.org/10.1002/9783527610983.ch16],
[Article]

Juslin, N. and Erhart, P. and Traskelin, P. and Nord, J. and Henriksson, K. O. E. and Nordlund, K. and Salonen, E. and Albe, K. (2005):
Analytical interatomic potential for modeling nonequilibrium processes in the W-C-H system.
In: J. Appl. Phys., American Institute of Physics, pp. 123520-1, 98, (12), ISSN 0021-8979,
[Online-Edition: http://jap.aip.org/resource/1/japiau/v98/i12/p123520_s1],
[Article]

Erhart, P. and Albe, K. (2005):
Molecular dynamics simulations of gas phase condensation of silicon carbide nanoparticles.
In: Adv. Eng. Mat., WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, pp. 937-945, 7, (10), [Online-Edition: http://onlinelibrary.wiley.com/doi/10.1002/adem.200500119/ab...],
[Article]

Erhart, P. and Bringa, E. M. and Kumar, M. and Albe, K. (2005):
Atomistic mechanism of shock-induced void collapse in nanoporous metals.
In: Phys. Rev. B, American Physical Society, pp. 052104-1, 72, (5), [Online-Edition: http://prb.aps.org/abstract/PRB/v72/i5/e052104],
[Article]

Erhart, P. and Albe, K. (2005):
Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide.
In: Phys. Rev. B, American Physical Society, pp. 035211-1, 71, (3), [Online-Edition: http://prb.aps.org/abstract/PRB/v71/i3/e035211],
[Article]

Erhart, P. and Albe, K. (2004):
The role of thermostats in modeling vapor phase condensation of silicon nanoparticles.
In: Appl. Surf. Sci., Elsevier Science Publishing Company, pp. 12-18, 226, (1-3), [Online-Edition: http://www.sciencedirect.com/science/article/pii/S0169433203...],
[Article]

Nord, J. and Albe, K. and Erhart, P. and Nordlund, K. (2003):
Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride.
In: J. Phys.: Condens. Matter., IOP Publishing, pp. 5649-5662, 15, (32), [Online-Edition: http://iopscience.iop.org/0953-8984/15/32/324/],
[Article]

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