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InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1995)
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4)
doi: 10.1016/0022-0248(94)00504-4
Article, Bibliographie

Item Type: Article
Erschienen: 1995
Creators: Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A.
Type of entry: Bibliographie
Title: InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy
Language: English
Date: 1995
Journal or Publication Title: Journal of Crystal Growth
Volume of the journal: 146
Issue Number: 1-4
DOI: 10.1016/0022-0248(94)00504-4
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 26 Apr 2015 22:46
Last Modified: 26 Apr 2015 22:46
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