Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5), pp. 2079-2083. ISSN 10711023,
[Article]
URL / URN: http://dx.doi.org/10.1116/1.3186615
| Item Type: | Article |
|---|---|
| Erschienen: | 2009 |
| Creators: | Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. |
| Title: | Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures |
| Language: | English |
| Journal or Publication Title: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| Volume of the journal: | 27 |
| Issue Number: | 5 |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 25 Mar 2015 21:32 |
| URL / URN: | http://dx.doi.org/10.1116/1.3186615 |
| Identification Number: | doi:10.1116/1.3186615 |
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