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Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. (2009)
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5)
doi: 10.1116/1.3186615
Article, Bibliographie

Item Type: Article
Erschienen: 2009
Creators: Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W.
Type of entry: Bibliographie
Title: Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures
Language: English
Date: September 2009
Journal or Publication Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume of the journal: 27
Issue Number: 5
DOI: 10.1116/1.3186615
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 25 Mar 2015 21:32
Last Modified: 25 Mar 2015 21:32
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