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Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5), pp. 2079-2083. ISSN 10711023,
[Article]

Item Type: Article
Erschienen: 2009
Creators: Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W.
Title: Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures
Language: English
Journal or Publication Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Journal volume: 27
Number: 5
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 25 Mar 2015 21:32
Official URL: http://dx.doi.org/10.1116/1.3186615
Identification Number: doi:10.1116/1.3186615
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