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Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system

Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W. (2000)
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167)
doi: 10.1016/S0168-583X(99)00866-6
Article, Bibliographie

Abstract

Silicon nitride phases are of technological interest for example as gate dielectric in thin film and field effect transistors. The present study compares nitrogen with ammonia plasma immersion ion implantation (PIII) of silicon before and after an annealing step. Nitrogen, silicon and hydrogen depth profiles were obtained by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). For ammonia plasma immersion implantation significantly higher nitrogen concentrations are obtained than for nitrogen implantation as well as the maximum of the nitrogen profile is buried. It turns out that despite the excess of H compared to N in the plasma only a maximum of 2.5 at.% of H is incorporated in a stoichiometric Si3N4 film in the as implanted state. Upon annealing, hydrogen-free silicon nitride films are obtained. The structure has been examined by transmission electron microscopy (TEM). XTEM shows that the initially amorphous SixNyH films are converted into crystalline α-Si3N4 after the annealing step.

Item Type: Article
Erschienen: 2000
Creators: Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W.
Type of entry: Bibliographie
Title: Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system
Language: English
Date: 2 May 2000
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Issue Number: 166-167
DOI: 10.1016/S0168-583X(99)00866-6
Abstract:

Silicon nitride phases are of technological interest for example as gate dielectric in thin film and field effect transistors. The present study compares nitrogen with ammonia plasma immersion ion implantation (PIII) of silicon before and after an annealing step. Nitrogen, silicon and hydrogen depth profiles were obtained by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). For ammonia plasma immersion implantation significantly higher nitrogen concentrations are obtained than for nitrogen implantation as well as the maximum of the nitrogen profile is buried. It turns out that despite the excess of H compared to N in the plasma only a maximum of 2.5 at.% of H is incorporated in a stoichiometric Si3N4 film in the as implanted state. Upon annealing, hydrogen-free silicon nitride films are obtained. The structure has been examined by transmission electron microscopy (TEM). XTEM shows that the initially amorphous SixNyH films are converted into crystalline α-Si3N4 after the annealing step.

Uncontrolled Keywords: Plasma immersion ion implantation, Silicon nitride, Transmission electron microscopy
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
Date Deposited: 25 Jun 2012 11:33
Last Modified: 30 Aug 2018 12:52
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