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Chemical characterization of SiCxNy nanolayers by FTIR-and Raman spectroscopy, XPS and TXRF-NEXAFS

Baake, O. ; Fainer, N. I. ; Hoffmann, P. S. ; Kosinova, M. L. ; Rumyantsev, Y. M. ; Trunova, V. A. ; Klein, Andreas ; Ensinger, W. ; Pollakowski, B. ; Beckhoff, B. ; Ulm, G. (2009)
Chemical characterization of SiCxNy nanolayers by FTIR-and Raman spectroscopy, XPS and TXRF-NEXAFS.
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 603 (1-2)
doi: 10.1016/j.nima.2009.03.007
Article, Bibliographie

Abstract

SiCxNy nanolayers were synthesized by a remote plasma enhanced chemical vapour deposition (RPECVD) method and chemically characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and near-edge X-ray absorption fine structure investigations in total reflection X-ray fluorescence geometry (TXRF-NEXAFS). The results are compared with those obtained for standard samples SiC and Si3N4 (and with spectra from the literature). As a first result, two or more compounds containing Si-N bonds (not Si3N4), one compound with a Si-C bond (not SiC), and graphitic carbon were identified.

Item Type: Article
Erschienen: 2009
Creators: Baake, O. ; Fainer, N. I. ; Hoffmann, P. S. ; Kosinova, M. L. ; Rumyantsev, Y. M. ; Trunova, V. A. ; Klein, Andreas ; Ensinger, W. ; Pollakowski, B. ; Beckhoff, B. ; Ulm, G.
Type of entry: Bibliographie
Title: Chemical characterization of SiCxNy nanolayers by FTIR-and Raman spectroscopy, XPS and TXRF-NEXAFS
Language: English
Date: 11 May 2009
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume of the journal: 603
Issue Number: 1-2
DOI: 10.1016/j.nima.2009.03.007
URL / URN: http://www.sciencedirect.com/science/article/B6TJM-4VT14C7-1...
Abstract:

SiCxNy nanolayers were synthesized by a remote plasma enhanced chemical vapour deposition (RPECVD) method and chemically characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and near-edge X-ray absorption fine structure investigations in total reflection X-ray fluorescence geometry (TXRF-NEXAFS). The results are compared with those obtained for standard samples SiC and Si3N4 (and with spectra from the literature). As a first result, two or more compounds containing Si-N bonds (not Si3N4), one compound with a Si-C bond (not SiC), and graphitic carbon were identified.

Uncontrolled Keywords: Chemical bonding, Silicon carbonitride, Thin film, TXRF-NEXAFS
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 15 Jul 2009 12:50
Last Modified: 25 Mar 2015 21:19
PPN:
Funders: This work was supported by RFBR Grant no. 07-03-91555-NNIO_a, and by the German Research Foundation (DFG) for the joint research project “Chemische und physikalische Charakterisierung von Nanoschichtsystemen”.
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