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Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

Vogel, Tobias ; Zintler, Alexander ; Kaiser, Nico ; Guillaume, Nicolas ; Lefèvre, Gauthier ; Lederer, Maximilian ; Serra, Anna Lisa ; Piros, Eszter ; Kim, Taewook ; Schreyer, Philipp ; Winkler, Robert ; Nasiou, Déspina ; Revello Olivo, Ricardo ; Ali, Tarek ; Lehninger, David ; Arzumanov, Alexey ; Charpin-Nicolle, Christelle ; Bourgeois, Guillaume ; Grenouillet, Laurent ; Cyrille, Marie-Claire ; Navarro, Gabriele ; Seidel, Konrad ; Kämpfe, Thomas ; Petzold, Stefan ; Trautmann, Christina ; Molina-Luna, Leopoldo ; Alff, Lambert (2022)
Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.
In: ACS Nano, 16 (9)
doi: 10.1021/acsnano.2c04841
Article, Bibliographie

Abstract

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO2-, HfZrO2-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. Wi t h this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.

Item Type: Article
Erschienen: 2022
Creators: Vogel, Tobias ; Zintler, Alexander ; Kaiser, Nico ; Guillaume, Nicolas ; Lefèvre, Gauthier ; Lederer, Maximilian ; Serra, Anna Lisa ; Piros, Eszter ; Kim, Taewook ; Schreyer, Philipp ; Winkler, Robert ; Nasiou, Déspina ; Revello Olivo, Ricardo ; Ali, Tarek ; Lehninger, David ; Arzumanov, Alexey ; Charpin-Nicolle, Christelle ; Bourgeois, Guillaume ; Grenouillet, Laurent ; Cyrille, Marie-Claire ; Navarro, Gabriele ; Seidel, Konrad ; Kämpfe, Thomas ; Petzold, Stefan ; Trautmann, Christina ; Molina-Luna, Leopoldo ; Alff, Lambert
Type of entry: Bibliographie
Title: Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation
Language: English
Date: 9 September 2022
Publisher: American Chemical Society
Journal or Publication Title: ACS Nano
Volume of the journal: 16
Issue Number: 9
DOI: 10.1021/acsnano.2c04841
Abstract:

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO2-, HfZrO2-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. Wi t h this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.

Uncontrolled Keywords: ferroelectric random-access memory, hafnium oxide, phase-change memory, phase transitions, resistive random-access memory, swift heavy ions, 4D-scanning transmission electron microscopy, automated crystal orientation mapping
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
Date Deposited: 09 Nov 2022 08:05
Last Modified: 26 Feb 2024 08:18
PPN: 501377433
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