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Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020)
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3)
doi: 10.1103/PhysRevApplied.14.034029
Article, Bibliographie

Abstract

Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/f(alpha)-type behavior is found, with a frequency exponent of alpha approximate to 1.2 that is independent of the applied reset voltage or the device resistance and is attributed to the intrinsic abundance of oxygen vacancies unique to the structure of yttria. Remarkably, the noise magnitude in the high resistive state systematically decreases through dc training. This effect is attributed to the stabilization of the conductive filament via the consumption of oxygen vacancies, thus reducing the number of active fluctuators in the vicinity of the filament.

Item Type: Article
Erschienen: 2020
Creators: Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert
Type of entry: Bibliographie
Title: Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy
Language: English
Date: 11 September 2020
Publisher: American Physical Society
Journal or Publication Title: Physical Review Applied
Volume of the journal: 14
Issue Number: 3
DOI: 10.1103/PhysRevApplied.14.034029
URL / URN: https://journals.aps.org/prapplied/abstract/10.1103/PhysRevA...
Abstract:

Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/f(alpha)-type behavior is found, with a frequency exponent of alpha approximate to 1.2 that is independent of the applied reset voltage or the device resistance and is attributed to the intrinsic abundance of oxygen vacancies unique to the structure of yttria. Remarkably, the noise magnitude in the high resistive state systematically decreases through dc training. This effect is attributed to the stabilization of the conductive filament via the consumption of oxygen vacancies, thus reducing the number of active fluctuators in the vicinity of the filament.

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 20 Nov 2020 11:46
Last Modified: 20 Nov 2020 11:46
PPN:
Projects: Electronic Components and Systems for European Leadership Joint Undertaking, European Union (EU), Grant number H2020/2014-2020, Grant Agreement No. 3783176, Deutscher Akademischer Austausch Dienst (DAAD), German Research Foundation (DFG), Grant number AL 560/13-2, Federal Ministry of Education & Research (BMBF), Grant number 16ES0250; 16ESE0298, ENIAC JU within the PANACHE project, German Research Foundation (DFG), Grant number MO 3010/3-1, European Research Council (ERC), Grant number 805359-FOXON
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