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Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11)
doi: 10.1002/aelm.202000439
Article, Bibliographie

Abstract

This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide-based resistive random-access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming-free devices, but also decreases the voltage operation window of switching, thereby reducing intra-device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi-gradual switching both for the set and reset processes, as strongly desired for multi-bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano-constriction including asymmetric potential drops at the electrodes and non-linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.

Item Type: Article
Erschienen: 2020
Creators: Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert
Type of entry: Bibliographie
Title: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
Language: English
Date: 9 September 2020
Publisher: Wiley
Journal or Publication Title: Advanced Electronic Materials
Volume of the journal: 6
Issue Number: 11
DOI: 10.1002/aelm.202000439
URL / URN: https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000439
Abstract:

This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide-based resistive random-access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming-free devices, but also decreases the voltage operation window of switching, thereby reducing intra-device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi-gradual switching both for the set and reset processes, as strongly desired for multi-bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano-constriction including asymmetric potential drops at the electrodes and non-linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.

Uncontrolled Keywords: Analog, conductance quantization, gradual, neuromorphic, oxygen engineering, resistive switching memory, yttria, yttrium oxide
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 20 Nov 2020 11:44
Last Modified: 03 Dec 2021 13:04
PPN:
Projects: Electronic Components and Systems for European Leadership Joint Undertaking, European Union (EU), Auvergne-Rhone Alpes Region, Federal Ministry of Education & Research (BMBF), Grant number 16ESE0298, Deutscher Akademischer Austausch Dienst (DAAD), German Research Foundation (DFG), Grant number AL 560/13-2, German Research Foundation (DFG), Grant number 384682067; MO 3010/3-1; AL 560/21-1, European Research Council (ERC), Grant number 805359-FOXON, Ministerio de Ciencia, Innovacion y Universidades, Spain, Grant number TEC2017-84321-C4-4-R PCI2018-093107, WAKeMeUP project, Projekt DEAL, Grant number 783176
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