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Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020
doi: 10.1002/aelm.202000439
Article, Bibliographie

Item Type: Article
Erschienen: 2020
Creators: Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert
Type of entry: Bibliographie
Title: Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching
Language: English
Date: 9 September 2020
Publisher: Wiley
Journal or Publication Title: Advanced Electronic Materials
Volume of the journal: 2020
DOI: 10.1002/aelm.202000439
URL / URN: https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202000...
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 11 Sep 2020 07:09
Last Modified: 29 Nov 2021 12:10
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