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Number of items: 4.

Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. (2022):
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route. (Publisher's Version)
In: RSC Advances, 9 (54), pp. 31386-31397. Royal Society of Chemistry, e-ISSN 2046-2069,
DOI: 10.26083/tuprints-00013229,
[Article]

Koslowski, Nico (2021):
Approaching metal oxide high-k dielectrics and semiconductors by solution-processing of molecular precursors. (Publisher's Version)
Darmstadt, Technische Universität,
DOI: 10.26083/tuprints-00019379,
[Ph.D. Thesis]

Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. (2019):
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.
In: RSC Advances, 9 (54), pp. 31386-31397. Royal Society of Chemistry, ISSN 2046-2069,
DOI: 10.1039/c9ra05348d,
[Article]

Sanctis, Shawn ; Hoffmann, Rudolf C. ; Koslowski, Nico ; Foro, Sabine ; Bruns, Michael ; Schneider, Jörg J. (2018):
Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications.
In: Chemistry - An Asian Journal, 13 (24), pp. 3912-3919. Wiley VCH, Weinheim, Germany, ISSN 18614728,
DOI: 10.1002/asia.201801371,
[Article]

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