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Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications

Sanctis, Shawn and Hoffmann, Rudolf C. and Koslowski, Nico and Foro, Sabine and Bruns, Michael and Schneider, Jörg J. (2018):
Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications.
In: Chemistry - An Asian Journal, 13 (24), pp. 3912-3919. Wiley VCH, Weinheim, Germany, ISSN 18614728,
DOI: 10.1002/asia.201801371,
[Article]

Abstract

Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well‐defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG‐MS/IR). For all precursors a multistep decomposition involving a complex redox‐reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2/(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films.

Item Type: Article
Erschienen: 2018
Creators: Sanctis, Shawn and Hoffmann, Rudolf C. and Koslowski, Nico and Foro, Sabine and Bruns, Michael and Schneider, Jörg J.
Title: Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications
Language: English
Abstract:

Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well‐defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG‐MS/IR). For all precursors a multistep decomposition involving a complex redox‐reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2/(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films.

Journal or Publication Title: Chemistry - An Asian Journal
Journal volume: 13
Number: 24
Publisher: Wiley VCH, Weinheim, Germany
Uncontrolled Keywords: indium, gallium, metal oxides, molecular precursors, thin film transistors, zinc, urea-nitrate compounds
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Structure Research
Date Deposited: 28 Feb 2019 08:41
DOI: 10.1002/asia.201801371
Official URL: https://doi.org/10.1002/asia.201801371
Funders: S.S., R.H. and J.J.S. acknowledge financial support through the DFG SPP 1569 program., TEM investigations were performed at ERC Jülich under contract ERC‐TUD1., We gratefully acknowledge J. Engstler and S. Heinschke (both at TUDa) for performing TEM and XRD analysis.
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