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Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Koslowski, Nico and Hoffmann, Rudolf C. and Trouillet, Vanessa and Bruns, Michael and Foro, Sabine and Schneider, Jörg J. (2019):
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.
In: RSC Advances, 9 (54), pp. 31386-31397. Royal Society of Chemistry, ISSN 2046-2069,
DOI: 10.1039/c9ra05348d,
[Article]

Abstract

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1-3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 degrees C, with areal capacity values up to 250 nF cm(-2), leakage current densities below 1.0 x 10(-9) A cm(-2) (at 1 MV cm(-1)) and breakdown voltages above 2 MV cm(-1). Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO(2)1. The device exhibits decent TFT characteristics with a saturation mobility (mu(sat)) of 2.1 cm(2) V-1 s(-1), a threshold voltage (V-th) of 6.9 V and an on/off current ratio (I-on/off) of 7.6 x 10(5).

Item Type: Article
Erschienen: 2019
Creators: Koslowski, Nico and Hoffmann, Rudolf C. and Trouillet, Vanessa and Bruns, Michael and Foro, Sabine and Schneider, Jörg J.
Title: Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
Language: English
Abstract:

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1-3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 degrees C, with areal capacity values up to 250 nF cm(-2), leakage current densities below 1.0 x 10(-9) A cm(-2) (at 1 MV cm(-1)) and breakdown voltages above 2 MV cm(-1). Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO(2)1. The device exhibits decent TFT characteristics with a saturation mobility (mu(sat)) of 2.1 cm(2) V-1 s(-1), a threshold voltage (V-th) of 6.9 V and an on/off current ratio (I-on/off) of 7.6 x 10(5).

Journal or Publication Title: RSC Advances
Journal volume: 9
Number: 54
Publisher: Royal Society of Chemistry
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Structure Research
07 Department of Chemistry
07 Department of Chemistry > Fachgebiet Anorganische Chemie
Date Deposited: 10 Sep 2020 05:10
DOI: 10.1039/c9ra05348d
Official URL: https://doi.org/10.1039/c9ra05348d
Additional Information:

The acquisition of the K-Alpha(+) instrument at KIT was supported by the German Federal Ministry of Economics and Technology.

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