Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W. (2000)
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167)
doi: 10.1016/S0168-583X(99)00866-6
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Silicon nitride phases are of technological interest for example as gate dielectric in thin film and field effect transistors. The present study compares nitrogen with ammonia plasma immersion ion implantation (PIII) of silicon before and after an annealing step. Nitrogen, silicon and hydrogen depth profiles were obtained by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). For ammonia plasma immersion implantation significantly higher nitrogen concentrations are obtained than for nitrogen implantation as well as the maximum of the nitrogen profile is buried. It turns out that despite the excess of H compared to N in the plasma only a maximum of 2.5 at.% of H is incorporated in a stoichiometric Si3N4 film in the as implanted state. Upon annealing, hydrogen-free silicon nitride films are obtained. The structure has been examined by transmission electron microscopy (TEM). XTEM shows that the initially amorphous SixNyH films are converted into crystalline α-Si3N4 after the annealing step.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2000 |
| Autor(en): | Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W. |
| Art des Eintrags: | Bibliographie |
| Titel: | Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system |
| Sprache: | Englisch |
| Publikationsjahr: | 2 Mai 2000 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| (Heft-)Nummer: | 166-167 |
| DOI: | 10.1016/S0168-583X(99)00866-6 |
| Kurzbeschreibung (Abstract): | Silicon nitride phases are of technological interest for example as gate dielectric in thin film and field effect transistors. The present study compares nitrogen with ammonia plasma immersion ion implantation (PIII) of silicon before and after an annealing step. Nitrogen, silicon and hydrogen depth profiles were obtained by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). For ammonia plasma immersion implantation significantly higher nitrogen concentrations are obtained than for nitrogen implantation as well as the maximum of the nitrogen profile is buried. It turns out that despite the excess of H compared to N in the plasma only a maximum of 2.5 at.% of H is incorporated in a stoichiometric Si3N4 film in the as implanted state. Upon annealing, hydrogen-free silicon nitride films are obtained. The structure has been examined by transmission electron microscopy (TEM). XTEM shows that the initially amorphous SixNyH films are converted into crystalline α-Si3N4 after the annealing step. |
| Freie Schlagworte: | Plasma immersion ion implantation, Silicon nitride, Transmission electron microscopy |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 25 Jun 2012 11:33 |
| Letzte Änderung: | 30 Aug 2018 12:52 |
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