Hildebrandt, E. ; Kurian, J. ; Zimmermann, J. ; Fleissner, A. ; Seggern, H. von ; Alff, L. (2009)
Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (1)
doi: 10.1116/1.3043474
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, substrate temperature, and oxidation conditions were varied in a wide range in order to investigate their influence on the thin film characteristics. The oxidation conditions during growth were decisive to hafnium oxide film orientation on c-cut sapphire substrates; it was possible to grow single oriented (00l) or (−111) oriented hafnium oxide films depending upon the oxidation conditions. The authors could successfully grow hafnium oxide thin films with oxygen or hafnium vacancies, depending on the oxidation conditions during growth, evident from optical band gap measurements. All the hafnium oxide thin films investigated in this study, irrespective of oxygen/hafnium vacancies, failed to show any ferromagnetic characteristics.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2009 |
| Autor(en): | Hildebrandt, E. ; Kurian, J. ; Zimmermann, J. ; Fleissner, A. ; Seggern, H. von ; Alff, L. |
| Art des Eintrags: | Bibliographie |
| Titel: | Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies |
| Sprache: | Englisch |
| Publikationsjahr: | Februar 2009 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| Jahrgang/Volume einer Zeitschrift: | 27 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1116/1.3043474 |
| Kurzbeschreibung (Abstract): | Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, substrate temperature, and oxidation conditions were varied in a wide range in order to investigate their influence on the thin film characteristics. The oxidation conditions during growth were decisive to hafnium oxide film orientation on c-cut sapphire substrates; it was possible to grow single oriented (00l) or (−111) oriented hafnium oxide films depending upon the oxidation conditions. The authors could successfully grow hafnium oxide thin films with oxygen or hafnium vacancies, depending on the oxidation conditions during growth, evident from optical band gap measurements. All the hafnium oxide thin films investigated in this study, irrespective of oxygen/hafnium vacancies, failed to show any ferromagnetic characteristics. |
| Freie Schlagworte: | aluminium compounds, dielectric thin films, energy gap, hafnium compounds, magnetisation, molecular beam epitaxial growth, optical constants, oxidation, permittivity, vacancies (crystal), HfOx, HfO2, Hf, Al2O3, high-κ dielectric, hafnium oxide thin film, reactive molecular beam epitaxy |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
| Hinterlegungsdatum: | 30 Mär 2012 08:02 |
| Letzte Änderung: | 13 Aug 2021 14:08 |
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