Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram (1997)
Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals.
In: Applied Physics Letters, 70 (10)
doi: 10.1063/1.118517
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be DEV 50.6 (60.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe₂ interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 1997 |
| Autor(en): | Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals |
| Sprache: | Englisch |
| Publikationsjahr: | 1997 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 70 |
| (Heft-)Nummer: | 10 |
| DOI: | 10.1063/1.118517 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be DEV 50.6 (60.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe₂ interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 02 Aug 2024 12:37 |
| Letzte Änderung: | 02 Aug 2024 12:37 |
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| Suche nach Titel in: | TUfind oder in Google |
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Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals. (deposited 08 Nov 2021 12:07)
- Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals. (deposited 02 Aug 2024 12:37) [Gegenwärtig angezeigt]
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