Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D. (2010)
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a
Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In this article we have studied the existence of stress and strain in a Si-doped GaN (2µm)/sapphire structure grown by the metal-organic chemical vapour deposition (MOCVD) method and tried to model the parameters. The presence of stress in our sample is supported by an E2 Raman shift mode (∆ω) of about 1.25 cm−1. To find the amount of biaxial basal plane stress we performed two techniques, XRD and film bending by a profilometer. The XRD technique confirmed that the GaN layer has a hexagonal structure with the lattice constants of c = 5.1825˚ A and a = 3.187˚ A. Our theoretical calculations show that this layer suffers a biaxial stress (σa) of about 0.175 ± 0.003 GPa. The profilometer data analysis also leads to a compatible value of 0.12 ± 0.04 GPa. These parameters altogether suggest the relation ∆ω = 7.1 ± 0.1σ cm−1/GPa for this layer.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2010 |
| Autor(en): | Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D. |
| Art des Eintrags: | Bibliographie |
| Titel: | Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method |
| Sprache: | Englisch |
| Publikationsjahr: | Juni 2010 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Chinese Journal of Physics |
| Jahrgang/Volume einer Zeitschrift: | 48 |
| (Heft-)Nummer: | 3 |
| Kurzbeschreibung (Abstract): | In this article we have studied the existence of stress and strain in a Si-doped GaN (2µm)/sapphire structure grown by the metal-organic chemical vapour deposition (MOCVD) method and tried to model the parameters. The presence of stress in our sample is supported by an E2 Raman shift mode (∆ω) of about 1.25 cm−1. To find the amount of biaxial basal plane stress we performed two techniques, XRD and film bending by a profilometer. The XRD technique confirmed that the GaN layer has a hexagonal structure with the lattice constants of c = 5.1825˚ A and a = 3.187˚ A. Our theoretical calculations show that this layer suffers a biaxial stress (σa) of about 0.175 ± 0.003 GPa. The profilometer data analysis also leads to a compatible value of 0.12 ± 0.04 GPa. These parameters altogether suggest the relation ∆ω = 7.1 ± 0.1σ cm−1/GPa for this layer. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe |
| Hinterlegungsdatum: | 18 Dez 2018 07:43 |
| Letzte Änderung: | 18 Dez 2018 07:43 |
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