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Number of items: 14.

Brandt, Michael ; Krozer, ; Schüßler, ; Lin, ; Simon, ; Vogt, ; Rodriguez, ; Parmeggiani, ; Grajal, (1998):
Application of transmission line pulsed (TLP) stress for thermal and reliability characterisation of compound semiconductor devices.
In: Reliability Center of Japan (RCJ) Symposium <1998, Tokyo>: Proceedings, [Conference or Workshop Item]

Krozer, Viktor ; Brandt, ; Schüßler, ; Hartnagel, (1998):
Application of transmission line pulses for reliability characterisation of high temperature devices.
In: HiTEC´98: High -Temperature Electronics Conference <1998, Albuquerque>: Proceedings. S. 138-143, [Conference or Workshop Item]

Vogt, Alexander ; Brandt, ; Sigurdardottir, A. ; Schüßler, ; Pena, ; Simon, ; Hartnagel, H. L. ; Rodewald, ; Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunneling diodes.
In: European Symposium of Electron Devices, Failure Physics and Analysis <8, 1997, Arcachon, France>: Proceedings. S. 1691-1694, [Conference or Workshop Item]

Brandt, Michael ; Schüßler, ; Parmeggiani, ; Lin, ; Simon, ; Hartnagel, (1997):
Thermal simulation and characterisation of the reliability of terahertz Schottky diodes.
In: European Symposium of Electron Devices, Failure Physics and Analysis <8, 1997, Arcachon, France>: Proceedings. S. 1663-1666, [Conference or Workshop Item]

Brandt, Michael ; Schüßler, ; Krozer, ; Grajal, ; Hartnagel, (1997):
Transmission line pulse based reliability investigations of HBTs.
In: European Gallium Arsenide and Related III-V Compounds Applications Symposium <5, 1997, Bologna, Italy>: Proceedings. S. 105-108, [Conference or Workshop Item]

Brandt, Michael ; Schüßler, ; Lin, ; Simon, ; Hartnagel, (1997):
Transmission line pulse based reliability investigations of THz Schottky diodes.
In: ESA Electronic Components Conference <3, 1997, Noordwijk, NL>: Proceedings. S. 29-34, [Conference or Workshop Item]

Krozer, Viktor ; Ruppert, ; Schüßler, ; Fricke, ; Lee, ; Hartmann, (1996):
Calculation of the power capabilities of HBT amplifiers based on a new physical HBT model.
In: International journal of microwave and millimeter-wave computer-aided engineering. 6 (1996), No. 4, S. 270-280, [Article]

Brandt, Michael ; Krozer, ; Schüßler, ; Bock, ; Hartnagel, (1996):
Characterisation of reliability of compound semiconductor devices using electrical pulses.
In: Microelectronics and reliability. 36 (1996), S. 1891-1894, [Article]

Brandt, Michael ; Schüßler, ; Hartnagel, (1996):
Characterisation of the reliability of planar Schottky diodes for millimetre and submillimetre wave applications.
In: European Space Research and Technology Centre: ESA-ESTEC <1996, Noordwijk, NL>: Proceedings, [Conference or Workshop Item]

Fricke, K. ; Krozer, ; Schüßler, (1996):
Comparison of MESFET, HEMT, and HBT device performance at high temperatures.
In: High - Temperature Electronics Conference <1996, Albuquerque, NM, USA>: Proceedings, [Conference or Workshop Item]

Gehrig, Hans ; Schüßler, ; Kluge, (1996):
Geosiphon pyriforme, a fungus forming edocytobiosis with Nostoc (Cyanobacteria), is an ancestral member of the Glomales: evidence by SSUrRNA analysis.
In: Journal of molecular evolution. 43 (1996), S. 71-81, [Article]

Krozer, Viktor ; Würfl, ; Fricke, ; Schüßler, ; Lee, ; Hartnagel, (1995):
High temperature electronics with III-V compound semiconductors.
In: HITEN (High temperature electronics network) - news. 1995, Nr. 9, [Article]

Krozer, Viktor ; Schüßler, ; Fricke, ; Lee, ; Hartnagel, (1995):
High temperature microwave modeling and circuit design with MESFET's and HBT's.
In: International Symposium on Signals, Systems and Electronics: ISSE '95 <1995, San Francisco, USA>: Proceedings, [Conference or Workshop Item]

Pirling, Thilo ; Fricke, ; Schüßler, ; Lee, ; Fuess, H. ; Hartnagel, H. L. (1995):
Investigations on Pd/In-based high temperature stable ohmic contacts on GaAs by x-ray reflectometry and diffractometry.
In: Materials science and engineering. B 29 (1995), S. 70-73, [Article]

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