2024

Mahlouji, Reyhaneh ; Zhang, Yue ; Verheijen, Marcel A. ; Karwal, Saurabh ; Hofmann, Jan P. ; Kessels, Wilhelmus M. M. ; Bol, Ageeth A. (2024)
Influence of high-κ dielectrics integration on ALD-based MoS2 field-effect transistor performance.
In: ACS Applied Nano Materials, 7 (16)
doi: 10.1021/acsanm.4c02214
Artikel, Bibliographie

2021

Mahlouji, Reyhaneh ; Zhang, Yue ; Verheijen, Marcel A. ; Hofmann, Jan P. ; Kessels, Wilhelmus M. M. ; Sagade, Abhay A. ; Bol, Ageeth A. (2021)
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance.
In: ACS Applied Electronic Materials
doi: 10.1021/acsaelm.1c00379
Artikel, Bibliographie

Mahlouji, Reyhaneh ; Verheijen, Marcel A. ; Zhang, Yue ; Hofmann, Jan P. ; Kessels, Wilhelmus. M. M. (Erwin) ; Bol, Ageeth A. (2021)
Thickness and Morphology Dependent Electrical Properties of ALD‐Synthesized MoS 2 FETs.
In: Advanced Electronic Materials
doi: 10.1002/aelm.202100781
Artikel, Bibliographie

2020

Sharma, Akhil ; Mahlouji, Reyhaneh ; Wu, Longfei ; Verheijen, Marcel A. ; Vandalon, Vincent ; Balasubramanyam, Shashank ; Hofmann, Jan P. ; Kessels, W. M. M. (Erwin) ; Bol, Ageeth A. (2020)
Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications.
In: Nanotechnology, 31 (25)
doi: 10.1088/1361-6528/ab7593
Artikel, Bibliographie