Vogt, A. ; Brandt, M. ; Sigurdardottir, A. ; Schüssler, M. ; Pena, D. ; Simon, A. ; Hartnagel, H. L. ; Rodewald, M. ; Roesner, M. ; Fuess, H. ; Goswami, S. N. N. ; Lal, K. (1997)
Characterisation of degradation mechanisms in resonant tunnelling diodes.
In: Microelectronics Reliability, 37 (10-11)
doi: 10.1016/S0026-2714(97)00141-8
Article, Bibliographie
Abstract
By applying high voltage transmission line pulses and elevated temperatures we stressed resonant tunnelling diodes (RTD). The influence of the stress on the electrical characteristics of these devices is shown and the possible degradation mechanisms are identified. Various RTDs from different semiconductor systems (arsenides and antimonides) have been fabricated using molecular beam epitaxy. We report the influence of the growth temperatures of these RTDs on the device degradation.
| Item Type: | Article |
|---|---|
| Erschienen: | 1997 |
| Creators: | Vogt, A. ; Brandt, M. ; Sigurdardottir, A. ; Schüssler, M. ; Pena, D. ; Simon, A. ; Hartnagel, H. L. ; Rodewald, M. ; Roesner, M. ; Fuess, H. ; Goswami, S. N. N. ; Lal, K. |
| Type of entry: | Bibliographie |
| Title: | Characterisation of degradation mechanisms in resonant tunnelling diodes |
| Language: | English |
| Date: | 1 October 1997 |
| Publisher: | Elsevier |
| Journal or Publication Title: | Microelectronics Reliability |
| Volume of the journal: | 37 |
| Issue Number: | 10-11 |
| DOI: | 10.1016/S0026-2714(97)00141-8 |
| Abstract: | By applying high voltage transmission line pulses and elevated temperatures we stressed resonant tunnelling diodes (RTD). The influence of the stress on the electrical characteristics of these devices is shown and the possible degradation mechanisms are identified. Various RTDs from different semiconductor systems (arsenides and antimonides) have been fabricated using molecular beam epitaxy. We report the influence of the growth temperatures of these RTDs on the device degradation. |
| Additional Information: | 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF'97), Arcachon, France, 07.-10.10.1997 |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Structure Research 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik 11 Department of Materials and Earth Sciences > Department of Earth Sciences (1999 merged into Department of Materials and Earth Sciences) |
| Date Deposited: | 19 Nov 2008 16:04 |
| Last Modified: | 13 Jun 2023 09:23 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum