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Scanning tunneling microscopy characterization of MOCVD grown GaN

Horn, Joachim ; Pavlidis, Dimitris ; Park, Yongjo ; Hartnagel, Hans L. (1996)
Scanning tunneling microscopy characterization of MOCVD grown GaN.
In: Materials Science and Engineering: B, 44 (1/3)
doi: 10.1016/S0921-5107(96)01791-6
Article, Bibliographie

Item Type: Article
Erschienen: 1996
Creators: Horn, Joachim ; Pavlidis, Dimitris ; Park, Yongjo ; Hartnagel, Hans L.
Type of entry: Bibliographie
Title: Scanning tunneling microscopy characterization of MOCVD grown GaN
Language: English
Date: 1996
Publisher: Elsevier
Journal or Publication Title: Materials Science and Engineering: B
Volume of the journal: 44
Issue Number: 1/3
DOI: 10.1016/S0921-5107(96)01791-6
Additional Information:

3. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC), Breisgau, 1996

Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
Last Modified: 08 May 2024 09:13
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