Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. (2015):
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, 44 (8), pp. 2930-2938. Springer Berlin Heidelberg, ISSN 0361-5235,
[Article]
Abstract
We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.
| Item Type: | Article |
|---|---|
| Erschienen: | 2015 |
| Creators: | Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. |
| Title: | (001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates |
| Language: | English |
| Abstract: | We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface. |
| Journal or Publication Title: | Journal of Electronic Materials |
| Volume of the journal: | 44 |
| Issue Number: | 8 |
| Publisher: | Springer Berlin Heidelberg |
| Uncontrolled Keywords: | CeO2, molecular beam epitaxy, thin film growth |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences |
| Date Deposited: | 02 Jul 2015 12:38 |
| URL / URN: | http://dx.doi.org/10.1007/s11664-015-3728-2 |
| Identification Number: | doi:10.1007/s11664-015-3728-2 |
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