TU Darmstadt / ULB / TUbiblio

(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates

Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. (2015)
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, 44 (8)
doi: 10.1007/s11664-015-3728-2
Article, Bibliographie

Abstract

We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.

Item Type: Article
Erschienen: 2015
Creators: Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L.
Type of entry: Bibliographie
Title: (001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates
Language: English
Date: August 2015
Publisher: Springer Berlin Heidelberg
Journal or Publication Title: Journal of Electronic Materials
Volume of the journal: 44
Issue Number: 8
DOI: 10.1007/s11664-015-3728-2
Abstract:

We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.

Uncontrolled Keywords: CeO2, molecular beam epitaxy, thin film growth
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 02 Jul 2015 12:38
Last Modified: 02 Jul 2015 12:38
PPN:
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details