Klös, Alexander ; Kostka, (1995):
A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs.
In: Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 218-221, Berlin, Heidelberg (u.a.): Springer, 1995, Berlin, Heidelberg (u.a.), Springer, [Book Section]
| Item Type: | Book Section |
|---|---|
| Erschienen: | 1995 |
| Creators: | Klös, Alexander ; Kostka, |
| Title: | A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs |
| Language: | English |
| Book Title: | Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 218-221 |
| Place of Publication: | Berlin, Heidelberg (u.a.) |
| Publisher: | Springer |
| Edition: | Berlin, Heidelberg (u.a.): Springer, 1995 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology |
| Date Deposited: | 19 Nov 2008 15:58 |
| License: | [undefiniert] |
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