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A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs

Klös, Alexander ; Kostka, (1995)
A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs.
In: Simulation of semiconductor devices and processes. Vol. 6., Edition: Berlin, Heidelberg (u.a.): Springer, 1995
Book Section, Bibliographie

Item Type: Book Section
Erschienen: 1995
Creators: Klös, Alexander ; Kostka,
Type of entry: Bibliographie
Title: A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs
Language: English
Date: 1995
Place of Publication: Berlin, Heidelberg (u.a.)
Publisher: Springer
Book Title: Simulation of semiconductor devices and processes. Vol. 6.
Edition: Berlin, Heidelberg (u.a.): Springer, 1995
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:58
Last Modified: 05 Mar 2013 08:33
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