Kuphal, E. ; Mause, K. ; Miethe, K. ; Eisenbach, A. ; Fiedler, F. ; Corbet, A. (1995):
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors.
In: Solid state electronics, 38 (4), pp. 795-799. Elsevier, e-ISSN 1879-2405,
DOI: 10.1016/0038-1101(94)00182-F,
[Article]
| Item Type: | Article |
|---|---|
| Erschienen: | 1995 |
| Creators: | Kuphal, E. ; Mause, K. ; Miethe, K. ; Eisenbach, A. ; Fiedler, F. ; Corbet, A. |
| Title: | Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors |
| Language: | English |
| Journal or Publication Title: | Solid state electronics |
| Volume of the journal: | 38 |
| Issue Number: | 4 |
| Publisher: | Elsevier |
| Divisions: | 18 Department of Electrical Engineering and Information Technology |
| Date Deposited: | 19 Nov 2008 15:58 |
| DOI: | 10.1016/0038-1101(94)00182-F |
| License: | [undefiniert] |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum