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Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors

Kuphal, E. ; Mause, K. ; Miethe, K. ; Eisenbach, A. ; Fiedler, F. ; Corbet, A. (1995)
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors.
In: Solid state electronics, 38 (4)
doi: 10.1016/0038-1101(94)00182-F
Article, Bibliographie

Item Type: Article
Erschienen: 1995
Creators: Kuphal, E. ; Mause, K. ; Miethe, K. ; Eisenbach, A. ; Fiedler, F. ; Corbet, A.
Type of entry: Bibliographie
Title: Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors
Language: English
Date: 1995
Publisher: Elsevier
Journal or Publication Title: Solid state electronics
Volume of the journal: 38
Issue Number: 4
DOI: 10.1016/0038-1101(94)00182-F
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:58
Last Modified: 03 Dec 2021 12:44
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