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Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia

Lederer, Maximilian ; Vogel, Tobias ; Kämpfe, Thomas ; Kaiser, Nico ; Piros, Eszter ; Olivo, Ricardo ; Ali, Tarek ; Petzold, Stefan ; Lehninger, David ; Trautmann, Christina ; Alff, Lambert ; Seidel, Konrad (2022)
Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia.
In: Journal of Applied Physics, 132 (6)
doi: 10.1063/5.0098953
Article, Bibliographie

Abstract

The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory.

Item Type: Article
Erschienen: 2022
Creators: Lederer, Maximilian ; Vogel, Tobias ; Kämpfe, Thomas ; Kaiser, Nico ; Piros, Eszter ; Olivo, Ricardo ; Ali, Tarek ; Petzold, Stefan ; Lehninger, David ; Trautmann, Christina ; Alff, Lambert ; Seidel, Konrad
Type of entry: Bibliographie
Title: Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia
Language: English
Date: 14 August 2022
Publisher: AIP Publishing
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 132
Issue Number: 6
DOI: 10.1063/5.0098953
Abstract:

The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory.

Additional Information:

Artikel-ID: 064102

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
Date Deposited: 27 Feb 2024 06:01
Last Modified: 27 Feb 2024 07:51
PPN: 515826030
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