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Kinetically induced low-temperature synthesis of Nb3Sn thin films

Schäfer, N. ; Karabas, N. ; Palakkal, J. P. ; Petzold, S. ; Major, M. ; Pietralla, N. ; Alff, L. (2020)
Kinetically induced low-temperature synthesis of Nb3Sn thin films.
In: Journal of Applied Physics, 128 (13)
doi: 10.1063/5.0015376
Article, Bibliographie

Abstract

Nb3Sn thin films are promising candidates for future application in superconducting radio frequency cavities due to their low surface resistivity, high critical temperature, and critical field, as compared to bulk niobium, which is the current state of the art. In this paper, we report the deposition of Nb3Sn thin films by magnetron co-sputtering at the extremely low temperature of 435 degrees C. These thin films show a critical temperature of 16.3 K, a high critical current density of 1.60 x 10(5) A/cm(2), and a strong shielding effect. The key to achieving low-temperature growth is the independent kinetic control of Nb and Sn species in the sputtering process. From a technological viewpoint, the low-temperature approach paves the way for the use of Nb3Sn as a coating in cryogenic efficient copper based cavities, thereby avoiding the detrimental interdiffusion of Cu.

Item Type: Article
Erschienen: 2020
Creators: Schäfer, N. ; Karabas, N. ; Palakkal, J. P. ; Petzold, S. ; Major, M. ; Pietralla, N. ; Alff, L.
Type of entry: Bibliographie
Title: Kinetically induced low-temperature synthesis of Nb3Sn thin films
Language: English
Date: 7 October 2020
Publisher: American Institute of Physics
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 128
Issue Number: 13
DOI: 10.1063/5.0015376
URL / URN: https://aip.scitation.org/doi/10.1063/5.0015376
Abstract:

Nb3Sn thin films are promising candidates for future application in superconducting radio frequency cavities due to their low surface resistivity, high critical temperature, and critical field, as compared to bulk niobium, which is the current state of the art. In this paper, we report the deposition of Nb3Sn thin films by magnetron co-sputtering at the extremely low temperature of 435 degrees C. These thin films show a critical temperature of 16.3 K, a high critical current density of 1.60 x 10(5) A/cm(2), and a strong shielding effect. The key to achieving low-temperature growth is the independent kinetic control of Nb and Sn species in the sputtering process. From a technological viewpoint, the low-temperature approach paves the way for the use of Nb3Sn as a coating in cryogenic efficient copper based cavities, thereby avoiding the detrimental interdiffusion of Cu.

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 20 Nov 2020 11:51
Last Modified: 20 Nov 2020 11:51
PPN:
Projects: This work was supported by the German Federal Ministry of Education and Research (BMBF) through Grant No. 05H18RDRB2 and the German Research Foundation (DFG) through GRK 2128.
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