Vogt, Alexander and Brandt, and Sigurdardottir, A. and Schüssler, and Pena, and Simon, and Hartnagel, H. L. and Rodewald, and Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunnelling diodes.
In: Microelectronics and reliability. 37 (1997), S. 1691-1694, [Article]

Borgarino, M. and Menozzi, and Fantini, and Schüssler, and Hartnagel, (1995):
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs.
In: Alta frequenza. 7 (1995), No. 5, [Article]