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High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs

Borgarino, M. and Menozzi, and Fantini, and Schüssler, and Hartnagel, (1995):
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs.
In: Alta frequenza. 7 (1995), No. 5, [Article]

Item Type: Article
Erschienen: 1995
Creators: Borgarino, M. and Menozzi, and Fantini, and Schüssler, and Hartnagel,
Title: High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs
Language: German
Journal or Publication Title: Alta frequenza. 7 (1995), No. 5
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 15:58
License: [undefiniert]
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