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Number of items: 4.

Nandi, Uttam (2021):
ErAs:In(Al)GaAs photoconductors for 1550 nm-based Terahertz time domain spectroscopy systems. (Publisher's Version)
Darmstadt, Technische Universität,
DOI: 10.26083/tuprints-00019407,
[Ph.D. Thesis]

Fernandez Olvera, Anuar de Jesus ; Krause, Benedikt Leander ; Betancur-Perez, Andres ; Nandi, Uttam ; Dios, Cristina de ; Acedo, Pablo ; Preu, Sascha (2021):
Frequency Selective Optoelectronic Downconversion of a Terahertz Pulse Using ErAs:In(Al)GaAs Photoconductors. (Publisher's Version)
In: IEEE Access, 9, pp. 95391-95400. IEEE, ISSN 2169-3536,
DOI: 10.26083/tuprints-00019460,

Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha (2020):
ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.
In: Optics Letters, 45 (10), pp. 2812-2815. OSA Publishing, ISSN 0146-9592,
DOI: 10.1364/OL.388870,

Nandi, Uttam ; Faridi, Fahd R. ; Fernandez Olvera, Anuar de Jesus ; Norman, Justin ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha (2019):
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors.
pp. 115-117, 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Bochum, Germany, 16-18 July 2019, ISBN 978-1-7281-0936-7,
DOI: 10.1109/IMWS-AMP.2019.8880067,
[Conference or Workshop Item]

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