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ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW

Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha (2020):
ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.
In: Optics Letters, 45 (10), pp. 2812-2815. OSA Publishing, ISSN 0146-9592,
DOI: 10.1364/OL.388870,
[Article]

Abstract

Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica ``TeraFlash pro'' system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.

Item Type: Article
Erschienen: 2020
Creators: Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha
Title: ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW
Language: English
Abstract:

Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica ``TeraFlash pro'' system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.

Journal or Publication Title: Optics Letters
Journal volume: 45
Number: 10
Publisher: OSA Publishing
Uncontrolled Keywords: Detector materials, High power lasers, Laser beams, Laser systems, Material properties, Optical systems
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 08 Mar 2021 07:25
DOI: 10.1364/OL.388870
Official URL: http://ol.osa.org/abstract.cfm?URI=ol-45-10-2812
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