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ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW

Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha (2020)
ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.
In: Optics Letters, 45 (10)
doi: 10.1364/OL.388870
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica ``TeraFlash pro'' system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.

Typ des Eintrags: Artikel
Erschienen: 2020
Autor(en): Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha
Art des Eintrags: Bibliographie
Titel: ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW
Sprache: Englisch
Publikationsjahr: Mai 2020
Verlag: OSA Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Optics Letters
Jahrgang/Volume einer Zeitschrift: 45
(Heft-)Nummer: 10
DOI: 10.1364/OL.388870
URL / URN: http://ol.osa.org/abstract.cfm?URI=ol-45-10-2812
Kurzbeschreibung (Abstract):

Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica ``TeraFlash pro'' system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.

Freie Schlagworte: Detector materials, High power lasers, Laser beams, Laser systems, Material properties, Optical systems
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems
Hinterlegungsdatum: 08 Mär 2021 07:25
Letzte Änderung: 10 Dez 2021 07:12
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