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Number of items: 7.

Ullah, M. W. and Kuronen, A. and Stukowski, A. and Djurabekova, F. and Nordlund, K. (2014):
Atomistic simulation of Er irradiation induced defects in GaN nanowires.
In: Journal of Applied Physics, AIP Publishing LLC, p. 124313, 116, (12), ISSN 0021-8979,
[Online-Edition: http://dx.doi.org/10.1063/1.4896787],
[Article]

Jarvi, T. T. and Kuronen, A. and Nordlund, K. and Albe, K. (2009):
Damage production in nanoparticles under light ion irradiation.
In: Phys. Rev. B, American Physical Society, pp. 132101-1, 80, (13), [Online-Edition: http://prb.aps.org/abstract/PRB/v80/i13/e132101],
[Article]

Jarvi, T. T. and Kuronen, A. and Nordlund, K. and Albe, K. (2009):
Low energy cluster deposition of nanoalloys.
In: J. Appl. Phys., American Physical Society, pp. 063516-2, 106, (6), [Online-Edition: https://doi.org/10.1063/1.3225910],
[Article]

Jaervi, T. T. and Pohl, D. and Albe, K. and Rellinghaus, B. and Schultz, L. and Fassbender, J. and Kuronen, A. and Nordlund, K. (2009):
From multiply twinned to fcc nanoparticles via irradiation-induced transient amorphization.
In: Europhys. Lett., IOP Publishing, pp. 26001-p1, 85, (2), [Online-Edition: http://iopscience.iop.org/0295-5075/85/2/26001/],
[Article]

Jarvi, T. T. and Kuronen, A. and Nordlund, K. and Albe, K. (2007):
Structural modification of a multiply twinned nanoparticle by ion irradiation: A molecular dynamics study.
In: J. Applied Physics, pp. 124304-2, 102, (12), ISSN 0021-8979,
[Online-Edition: http://jap.aip.org/resource/1/japiau/v102/i12/p124304_s1],
[Article]

Jarvi, T. T. and Kuronen, A. and Meinander, K. and Nordlund, K. and Albe, K. (2007):
Contact epitaxy by deposition of Cu, Ag, Au, Pt, and Ni nanoclusters on (100) surfaces: Size limits and mechanisms.
In: Phys. Rev. B, American Physical Society, pp. 115422-1, 75, (11), [Online-Edition: http://prb.aps.org/abstract/PRB/v75/i11/e115422],
[Article]

Albe, K. and Nordlund, K. and Nord, J. and Kuronen, A. (2002):
Modeling of compound semiconductors: Analytical bond-order potential for Ga, As, and GaAs.
In: Phys. Rev. B, American Physical Society, pp. 035205-1, 66, (3), [Online-Edition: http://prb.aps.org/abstract/PRB/v66/i3/e035205],
[Article]

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