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Number of items: 4.

Sirkeli, V. P. and Yilmazoglu, O. and Al-Daffaie, S. and Oprea, I. and Ong, D. S. and Kueppers, F. and Hartnagel, H. L. (2016):
Effect of Si-Doping of the GaN Barrier on the Internal Quantum Efficiency of InGaN/GaN Light-Emitting Diodes.
In: 8th International Conference on Materials Science and Condensed Matter Physics / MSCMP-2016, Chisinau, Moldova, September 2016, [Conference or Workshop Item]

Emsia, A. and Le, Q. T. and Guendogdu, R. E. and Malekizandi, M. and Betou, Einar in de and Olson, M. and Keck, J. and Herber, R. and Rienecker, K. and Fricke, M. and Kueppers, F. (2016):
Cost-efficient Upstream Transmitter Using Injection Locked Fabry-Perot Laser Diodes for Multi-Gbit/s WDM-PON.
In: Proceedings of Photonic Networks; 17. ITG-Symposium, [Conference or Workshop Item]

Le, Q. T. and Zogal, K. and Lerber, Tuomo von and Gierl, C. and Emsia, A. and Briggmann, D. and Meissner, P. and Kueppers, F. (2013):
Direct DPSK Modulation of Chirp Managed Lasers and New Options for Symmetrical 10-Gbit/s WDM PONs.
In: Ecoc 2012, Amsterdam, Netherlands, September 2012, [Conference or Workshop Item]

Zogal, K. and Gruendl, T. and Davani, H. A. and Gierl, C. and Grasse, C. and Kueppers, F. and Meissner, P. and Amann, M.-C. (2012):
1.55 µm high-speed MEMS-tunable VCSEL.
In: Proceedings of SPIE, pp. 82760R-82760R, 8276, (1), [Online-Edition: http://spiedigitallibrary.org/proceedings/resource/2/psisdg/...],
[Article]

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