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Effect of Si-Doping of the GaN Barrier on the Internal Quantum Efficiency of InGaN/GaN Light-Emitting Diodes.

Sirkeli, V. P. and Yilmazoglu, O. and Al-Daffaie, S. and Oprea, I. and Ong, D. S. and Kueppers, F. and Hartnagel, H. L. (2016):
Effect of Si-Doping of the GaN Barrier on the Internal Quantum Efficiency of InGaN/GaN Light-Emitting Diodes.
In: 8th International Conference on Materials Science and Condensed Matter Physics / MSCMP-2016, Chisinau, Moldova, September 2016, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Sirkeli, V. P. and Yilmazoglu, O. and Al-Daffaie, S. and Oprea, I. and Ong, D. S. and Kueppers, F. and Hartnagel, H. L.
Title: Effect of Si-Doping of the GaN Barrier on the Internal Quantum Efficiency of InGaN/GaN Light-Emitting Diodes.
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology
Event Title: 8th International Conference on Materials Science and Condensed Matter Physics / MSCMP-2016
Event Location: Chisinau, Moldova
Event Dates: September 2016
Date Deposited: 28 Mar 2017 12:29
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