Zintler, A. ; Kunz, U. ; Pivak, Y. ; Sharath, S. U. ; Vogel, S. ; Hildebrandt, E. ; Kleebe, H.-J. ; Alff, L. ; Molina-Luna, L. (2017)
FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope.
In: Ultramicroscopy, 181
doi: 10.1016/j.ultramic.2017.04.008
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Recent advances in microelectromechanical systems (MEMS) based chips for in situ transmission electron microscopy are opening exciting new avenues in nanoscale research. The capability to perform current-voltage measurements while simultaneously analyzing the corresponding structural, chemical or even electronic structure changes during device operation would be a major breakthrough in the field of nanoelectronics. In this work we demonstrate for the first time how to electrically contact and operate a lamella cut from a resistive random access memory (RRAM) device based on a Pt/HfO2/TiN metal-insulator-metal (MIM) structure. The device was fabricated using a focused ion beam (FIB) instrument and an in situ lift-out system. The electrical switching characteristics of the electron-transparent lamella were comparable to a conventional reference device. The lamella structure was initially found to be in a low resistance state and could be reset progressively to higher resistance states by increasing the positive bias applied to the Pt anode. This could be followed up with unipolar set/reset operations where the current compliance during set was limited to 400 µA. FIB structures allowing to operate and at the same time characterize electronic devices will be an important tool to improve RRAM device performance based on a microstructural understanding of the switching mechanism.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Zintler, A. ; Kunz, U. ; Pivak, Y. ; Sharath, S. U. ; Vogel, S. ; Hildebrandt, E. ; Kleebe, H.-J. ; Alff, L. ; Molina-Luna, L. |
| Art des Eintrags: | Bibliographie |
| Titel: | FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope |
| Sprache: | Englisch |
| Publikationsjahr: | Oktober 2017 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Ultramicroscopy |
| Jahrgang/Volume einer Zeitschrift: | 181 |
| DOI: | 10.1016/j.ultramic.2017.04.008 |
| URL / URN: | https://doi.org/10.1016/j.ultramic.2017.04.008 |
| Kurzbeschreibung (Abstract): | Recent advances in microelectromechanical systems (MEMS) based chips for in situ transmission electron microscopy are opening exciting new avenues in nanoscale research. The capability to perform current-voltage measurements while simultaneously analyzing the corresponding structural, chemical or even electronic structure changes during device operation would be a major breakthrough in the field of nanoelectronics. In this work we demonstrate for the first time how to electrically contact and operate a lamella cut from a resistive random access memory (RRAM) device based on a Pt/HfO2/TiN metal-insulator-metal (MIM) structure. The device was fabricated using a focused ion beam (FIB) instrument and an in situ lift-out system. The electrical switching characteristics of the electron-transparent lamella were comparable to a conventional reference device. The lamella structure was initially found to be in a low resistance state and could be reset progressively to higher resistance states by increasing the positive bias applied to the Pt anode. This could be followed up with unipolar set/reset operations where the current compliance during set was limited to 400 µA. FIB structures allowing to operate and at the same time characterize electronic devices will be an important tool to improve RRAM device performance based on a microstructural understanding of the switching mechanism. |
| Freie Schlagworte: | In situ TEM biasing, Resistive switching device, Metal-insulator-metal structure, Focused ion beam, Electrical characterization, Specimen preparation, Operando |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften > Fachgebiet Geomaterialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Physikalische Metallkunde |
| Hinterlegungsdatum: | 11 Dez 2017 11:49 |
| Letzte Änderung: | 30 Jan 2019 12:52 |
| PPN: | |
| Sponsoren: | Both the focused ion beam instrument and the transmission electron microscope employed for this work were partially funded by the German Research Foundation (DFG/INST163/2951)., The authors thank Mrs. B. Thybusch for assistance in the FIB preparation process., Electrical characterization was supported by the German Research Foundation (DFG/AL560/13-2), the Federal Ministry of Education and Research (BMBF) under contract 16ES0250 and by ENIAC JU within the project PANACHE. |
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