Sharath, Sankaramangalam Ulhas ; Vogel, Stefan ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Wenger, Christian ; Kurian, Jose ; Dürrschnabel, Michael ; Niermann, Tore ; Niu, Gang ; Calka, Pauline ; Lehmann, Michael ; Kleebe, Hans-Joachim ; Schroeder, Thomas ; Alff, Lambert (2017)
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices.
In: Advanced Functional Materials, 27 (32)
doi: 10.1002/adfm.201700432
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Hafnium oxide (HfOx)-based memristive devices have tremendous potential as nonvolatile resistive random access memory (RRAM) and in neuromorphic electronics. Despite its seemingly simple two-terminal structure, a myriad of RRAM devices reported in the rapidly growing literature exhibit rather complex resistive switching behaviors. Using Pt/HfOx/TiN-based metal–insulator–metal structures as model systems, it is shown that a well-controlled oxygen stoichiometry governs the filament formation and the occurrence of multiple switching modes. The oxygen vacancy concentration is found to be the key factor in manipulating the balance between electric field and Joule heating during formation, rupture (reset), and reformation (set) of the conductive filaments in the dielectric. In addition, the engineering of oxygen vacancies stabilizes atomic size filament constrictions exhibiting integer and half-integer conductance quantization at room temperature during set and reset. Identifying the materials conditions of different switching modes and conductance quantization contributes to a unified switching model correlating structural and functional properties of RRAM materials. The possibility to engineer the oxygen stoichiometry in HfOx will allow creating quantum point contacts with multiple conductance quanta as a first step toward multilevel memristive quantum devices.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Sharath, Sankaramangalam Ulhas ; Vogel, Stefan ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Wenger, Christian ; Kurian, Jose ; Dürrschnabel, Michael ; Niermann, Tore ; Niu, Gang ; Calka, Pauline ; Lehmann, Michael ; Kleebe, Hans-Joachim ; Schroeder, Thomas ; Alff, Lambert |
| Art des Eintrags: | Bibliographie |
| Titel: | Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices |
| Sprache: | Englisch |
| Publikationsjahr: | 2017 |
| Verlag: | Wiley-VCH Verlag GmbH & Co. KGaA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advanced Functional Materials |
| Jahrgang/Volume einer Zeitschrift: | 27 |
| (Heft-)Nummer: | 32 |
| DOI: | 10.1002/adfm.201700432 |
| URL / URN: | https://onlinelibrary.wiley.com/doi/10.1002/adfm.201700432 |
| Kurzbeschreibung (Abstract): | Hafnium oxide (HfOx)-based memristive devices have tremendous potential as nonvolatile resistive random access memory (RRAM) and in neuromorphic electronics. Despite its seemingly simple two-terminal structure, a myriad of RRAM devices reported in the rapidly growing literature exhibit rather complex resistive switching behaviors. Using Pt/HfOx/TiN-based metal–insulator–metal structures as model systems, it is shown that a well-controlled oxygen stoichiometry governs the filament formation and the occurrence of multiple switching modes. The oxygen vacancy concentration is found to be the key factor in manipulating the balance between electric field and Joule heating during formation, rupture (reset), and reformation (set) of the conductive filaments in the dielectric. In addition, the engineering of oxygen vacancies stabilizes atomic size filament constrictions exhibiting integer and half-integer conductance quantization at room temperature during set and reset. Identifying the materials conditions of different switching modes and conductance quantization contributes to a unified switching model correlating structural and functional properties of RRAM materials. The possibility to engineer the oxygen stoichiometry in HfOx will allow creating quantum point contacts with multiple conductance quanta as a first step toward multilevel memristive quantum devices. |
| Freie Schlagworte: | HfO2, memristors, oxygen stoichiometry, quantum conductance, unified model |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften > Fachgebiet Geomaterialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 11 Dez 2017 11:40 |
| Letzte Änderung: | 15 Sep 2021 08:09 |
| PPN: | |
| Sponsoren: | This work was supported by the Deutsche Forschungsgemeinschaft under project numbers AL560/13-2 and SCHR1123/7-2., Funding by the Federal Ministry of Education and Research (BMBF) under contract 16ES0250 is also gratefully acknowledged., The authors thank funding by ENIAC JU within the project PANACHE., The TU Darmstadt JEM ARM-F (scanning) transmission electron microscope employed for this investigation was partially funded by the German Research Foundation (DFG/INST163/2951)., L.M.-L. and M.D. acknowledge financial support from the Hessen State Ministry of Higher Education, Research and the Arts via LOEWE RESPONSE., The authors thank Ulrike Kunz (TU Darmstadt) for assistance with the Focused Ion Beam (FIB) TEM sample preparation and also Dominik Gölden and Arzhang Mani for support with device fabrication. |
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